• 专利标题:   Self-supporting fluorine-nitrogen doped graphene film material useful as anode in sodium-ion batteries comprises nitrogen, and fluorine.
  • 专利号:   CN108448068-A
  • 发明人:   FENG W, CHEN Y, LI Y
  • 专利权人:   UNIV TIANJIN
  • 国际专利分类:   H01M010/054, H01M004/133, H01M004/36, H01M004/587, H01M004/62
  • 专利详细信息:   CN108448068-A 24 Aug 2018 H01M-004/36 201860 Pages: 10 Chinese
  • 申请详细信息:   CN108448068-A CN10083911 16 Feb 2017
  • 优先权号:   CN10083911

▎ 摘  要

NOVELTY - Self-supporting fluorine-nitrogen doped graphene film material comprises 2-9.5% nitrogen, and 1-2% fluorine. USE - The graphene film material is useful as anode in sodium-ion batteries by cutting into fixed-size disk (claimed). DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparing self-supporting fluorine-nitrogen doped graphene film comprising (1) uniformly dispersing deionized water with graphene oxide on substrate to form a liquid film, drying under air atmosphere at 50-80 degrees C to obtain a graphene oxide film, and (ii) immersing the graphene oxide film in a mixture of acetonitrile and hydrofluoric acid, heating at more than 90 degrees C and less than 180 degrees C for 24-48 hours to achieve doping of the graphene oxide film by fluorine and nitrogen, where in mixture of acetonitrile and hydrofluoric acid the hydrofluoric acid is an aqueous solution of 40-50% hydrofluoric acid and the volume ratio of acetonitrile and hydrofluoric acid is 20-30:1-5)