▎ 摘　　要

NOVELTY - Production of graphene involves (i) providing a substrate (10) of silicon carbide, (ii) growing a graphene layer on the substrate, and (iii) applying a polymer layer and/or a sorbate (14) onto the substrate (10) before the growing the graphene layer, (iv) heating the substrate to temperature (t1) of at least 1100 degrees C in an inert gas atmosphere, preferably of 0.8-1.2 bar, (v) maintaining the temperature (t1) at 1300 degrees C for at least 8 minutes, and (vi) maintaining the substrate to a temperature (t2) of at least 1600 degrees C in the inert gas atmosphere. USE - Production of graphene used in manufacture of semiconductor devices. ADVANTAGE - The method enables production of graphene with excellent electronic properties and uniform charge carrier density distribution. DESCRIPTION OF DRAWING(S) - The drawings show a flowchart of production of graphene. Substrate (10) Substrate surface (12) Sorbate (14) Compressed gas (22) Process chamber (24)