▎ 摘　　要

NOVELTY - The detector has a single crystal silicon substrate (2) whose upper surface is etched into a silicon micro-pore array structure. The silicon micro-pore array structure is provided with an upper insulating layer (1). A layer of a graphene thin film (3) is formed on a lower surface of the single crystal silicon substrate to form a graphene-silicon Schottky hetero junction. The lower surface of the graphene film is provided with a lower insulating layer (4). The lower surface of the lower insulating layer is provided with a metal reflecting layer (5). An upper surface of the single crystal silicon substrate is formed with a top electrode (6). The lower surface of the graphene film is provided with a bottom electrode (7). The top electrode and the single crystal silicon substrate forms an ohm to contact the bottom electrode and the graphene film to form an ohmic contact. USE - Silicon-based micro-cavity narrow-band near-infrared photoelectric detector. ADVANTAGE - The detector is convenient to integrate, has low cost, high stability and strong compatibility, and realizes narrow-band near-infrared response of visible light blind. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a silicon-based micro-cavity narrow-band near-infrared photoelectric detector. Upper insulating layer (1) Single crystal silicon substrate (2) Graphene thin film (3) Lower insulating layer (4) Metal reflecting layer (5) Top electrode (6) Bottom electrode. (7)