▎ 摘　　要

NOVELTY - Preparing graphene-based transparent flexible conductive film layer involves growing a graphene bottom layer on the surface of an insulating substrate and depositing a flexible transparent metal conductive film on the graphene bottom layer. The method for growing a graphene bottom layer on the surface of an insulating substrate involves providing an insulating substrate, performing surface pretreatment on the insulating substrate, and then depositing a germanium (Ge) layer on the surface of the insulating substrate by magnetron sputtering as a metal catalyst layer. The chemical vapor deposition of a graphene layer on the surface of the Ge metal catalyst layer. The insulating substrate deposited with the graphene layer and the Ge layer is annealed at 600-700 degrees C in an oxygen atmosphere to remove the metal catalytic layer of the middle Ge layer. USE - Method for preparing graphene-based transparent flexible conductive film layer. ADVANTAGE - The method enables to prepare graphene-based transparent flexible conductive film layer, where silver and metal oxide are used as alloy targets, and the silver target is doped with metal oxides to improve the stability of the silver film, and also improves the anti-surge stability of the flexible transparent metal conductive film and increases the service life, and also conducive to forming a continuous and uniform flexible film at a low thickness, ensuring the transparency of the film layer and reducing the cost of raw materials. DETAILED DESCRIPTION - Preparing graphene-based transparent flexible conductive film layer involves growing a graphene bottom layer on the surface of an insulating substrate and depositing a flexible transparent metal conductive film on the graphene bottom layer. The method for growing a graphene bottom layer on the surface of an insulating substrate involves providing an insulating substrate, performing surface pretreatment on the insulating substrate, and then depositing a germanium (Ge) layer on the surface of the insulating substrate by magnetron sputtering as a metal catalyst layer. The chemical vapor deposition of a graphene layer on the surface of the Ge metal catalyst layer. The insulating substrate deposited with the graphene layer and the Ge layer is annealed at 600-700 degrees C in an oxygen atmosphere to remove the metal catalytic layer of the middle Ge layer. The method for depositing a flexible transparent metal conductive film on the graphene bottom layer involves putting obtained semi-finished product after the annealing treatment into the magnetron sputtering equipment. The magnetron sputtering is performed on the alloy target to deposit a flexible transparent metal conductive film on the surface of the graphene layer. The composition of the alloy target is 80-90 wt.% silver and 10-20 wt.% metal oxide, the metal oxide is selected from one of titanium dioxide, zinc oxide, tin dioxide, and indium oxide. The power of spray deposition is 30-60 watt, the sputtering gas is argon (Ar), and the time is 0.5-2 minutes.