• 专利标题:   Transferring atomic-level thickness graphene/boron nitride composite heterogeneous film by preparing graphene/boron nitride composite heterogeneous film, spraying layer of polymer support material on surface of film, baking and cooling.
  • 专利号:   CN108793100-A
  • 发明人:   ZHANG Y, LIU G, LIU Y, QIU J, CHENG X, YANG P, LV K, JI M, WANG G, XIE H, LI Q, LI H, ZHENG X, CHEN B, HU Y, LIN X
  • 专利权人:   UNIV NAT DEFENSE TECHNOLOGY CHINESE PEOP
  • 国际专利分类:   C01B021/064, C01B032/182
  • 专利详细信息:   CN108793100-A 13 Nov 2018 C01B-021/064 201906 Pages: 8 Chinese
  • 申请详细信息:   CN108793100-A CN10702780 30 Jun 2018
  • 优先权号:   CN10702780

▎ 摘  要

NOVELTY - Transferring atomic-level thickness graphene/boron nitride composite heterogeneous film involves: (1) preparing a graphene/boron nitride composite heterogeneous film to-be-transferred and spraying a layer of polymer support material (SP) on the surface of the film; (2) preparing a sample substrate for waiting to transfer the graphene/boron nitride composite heterogeneous film; (3) cleaning the sample substrate and blow-drying; (4) treating the surface of the sample substrate with oxygen ions, removing residual organic pollution on the surface of the substrate, and changing the substrate from hydrophobic to hydrophilic; (5) using a sample substrate to extract a graphene/boron nitride/SP film or composite heterogeneous films from deionized water; (6) leaving still the sample substrate with the composite heterogeneous thin film, dewatering and drying; (7) baking and cooling; and (8) removing the SP layer and then transferring to a low-surface-tension solution for cleaning. USE - The method is useful for transferring atomic-level thickness graphene/boron nitride composite heterogeneous film. ADVANTAGE - The method is capable of transferring the atomic-level thickness graphene/boron nitride composite heterogeneous film with high mechanical strength in an environmentally-friendly manner, and solves the problem that the film adheres to the sample substrate less tightly, has more wrinkles and porous holes caused by the traditional film transfer process, and improves the transfer yield of the film material. DETAILED DESCRIPTION - Transferring atomic-level thickness graphene/boron nitride composite heterogeneous film involves: (1) preparing a graphene/boron nitride composite heterogeneous film to-be-transferred, spraying a layer of support polymer (SP) material on the surface of the film, and floating the film in deionized water; (2) preparing a sample substrate and transferring the sample substrate to the heterogeneous film; (3) cleaning the sample substrate and blow-drying with nitrogen; (4) treating the surface of the sample substrate with oxygen ions, removing residual organic pollution on the surface of the substrate, and changing the substrate from hydrophobic to hydrophilic; (5) using a sample substrate to extract a graphene/boron nitride/SP film or composite heterogeneous films from deionized water; (6) leaving still the sample substrate with the composite heterogeneous thin film, naturally dewatering and drying the thin film at a low temperature; (7) slowly increasing the temperature to 50 degrees C and soft-baking during the heating process, then continuously and slowly increasing the temperature to near glass-state critical temperature of the thin film support polymer material, and slowly cooling to room temperature during the cooling process; and (8) removing the SP layer and transferring the SP layer to a low surface tension solution for cleaning and taking out.