▎ 摘　　要

NOVELTY - Preparing rare earth element-doped hafnium-based binary oxide thin film comprises substrate cleaning and thin film deposition, where thin film deposition is based on a single target radio frequency magnetron sputtering technology, and a binary alloy target containing rare earth elements and hafnium is used, and by controlling the flow ratio of argon to oxygen in the sputtering atmosphere, the element ratio between rare earth elements and hafnium in the binary oxide film is regulated, so as to meet the requirements of high-performance gate dielectric applications. USE - The rare earth element-doped hafnium-based binary oxide thin film is useful in graphene field effect transistor (claimed). ADVANTAGE - The method enables to prepare hafnium-based binary oxide film doped with rare earth element, which has high control precision, low cost, and avoids the risk of multi-target cross-contamination, and improves the device performance.