▎ 摘　　要

NOVELTY - The method involves forming a diffusion prevention film i.e. graphene on a metal substrate in foil form (S10). A transition metal precursor and a chalcogen-containing gas are supplied (S20) onto the graphene, so as to form a metal chalcogenide thin film. The substrate is transferred (S30), where the thickness of the metal substrate is between 25 and 100 micrometer, and the metal substrate is made from one of Cu, Ni, Pt, Fe, Au, brass, and stainless steel. A metal oxide film is formed on the metal substrate by oxidation of the metal substrate. USE - Method for producing a metal chalcogenide thin film on a flexible substrate. ADVANTAGE - The transition metal precursor and the chalcogen-containing gas are supplied onto the graphene, so as to form the metal chalcogenide thin film, thus enabling to obtain a high-quality and uniform metal chalcogenide thin film on the substrate. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart of a method for producing a metal chalcogenide thin film on a flexible substrate. '(Drawing includes non-English language text)' Start (AA) End (BB) Step for forming a diffusion prevention film i.e. graphene on a metal substrate in foil form (S10) Step for supplying transition metal precursor and chalcogen-containing gas onto the graphene, so as to form a metal chalcogenide thin film (S20) Step for transferring the substrate (S30)