▎ 摘　　要

NOVELTY - Preparing graphene comprises placing silicon carbide in a graphite crucible, vacuumizing in a high temperature vacuum furnace by filling certain amount of inert gas into the furnace, raising and preserving the temperature for certain time under a certain growth temperature and pressure conditions, evaporating the silicon atoms in silicon carbide, cooling the composition, crushing the obtained microcrystalline graphite, pouring into a container by adding certain amount of solvent, ultrasonic peeling via an ultrasonic device and filtering via centrifugal separation. USE - The method is useful for preparing graphene (claimed). ADVANTAGE - The method is easy to operate and suitable for industries; and produces graphene with high yield and high quality. DETAILED DESCRIPTION - Preparing graphene comprises (i) placing silicon carbide in a graphite crucible, placing the crucible in a high temperature vacuum furnace, closing the furnace door, vacuumizing and filling certain amount of inert gas into the furnace, raising the temperature and preserving the temperature for certain time under a certain growth temperature and pressure conditions, evaporating the silicon atoms in silicon carbide, cooling the composition to obtain microcrystalline graphite; (ii) crushing the microcrystalline graphite, pouring into a container by adding certain amount of solvent, placing in an ultrasonic device and ultrasonic peeling at certain power for a certain time and filtering via centrifugal separation to obtain graphene aqueous dispersion.