▎ 摘　　要

NOVELTY - The modulator has a p-type silicon substrate, a boron nitride film, a graphene film and an infrared laser beam that are sequentially arranged from bottom to top. USE - Terahertz modulator based on graphene/boron nitride heterostructure for use in teraherz compressed sensing imaging. Uses include but are not limited to inspection, high-speed communication and non-destructive imaging. ADVANTAGE - The terahertz modulator has improved light modulation depth and speed of tera hertz wave infrared light excitation of the laser, and stronger modulation capability. The boron nitride film can greatly increase the carrier mobility of the graphene film compared with the single-layer graphene modified silicon structure, and has higher carrier mobility under the irradiation of the same power laser. The graphene film resistivity is 100-3000 cm, and the P-type silicon substrate thickness is 400-600 m m. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for preparation method of terahertz modulator comprising (a) cutting the single oxide layer p-type silicon sheet with resistivity of between 10-30 Omega cm into the square sheet of 10mm asterisk 10mm, and orderly using acetone, alcohol, deionized water in the ultrasonic cleaning, using nitrogen to dry, (b) cutting copper substrate with boron nitride film into a size of 9mm asterisk 9mm, spin coating a layer of polymethyl methacrylate (PMMA) on one surface of the boron nitride film, then putting into 1mol/L of iron chloride solution, washing, and transferring to the clean P-type silicon substrate, and using acetone to remove PMMA on the surface of the boron nitride film, transferring the boron nitride film; (c) cutting the copper substrate with graphene film into 8mm asterisk 8mm size, spin coating a layer of PMMA, then putting into 1mol/L of iron chloride solution, washing, and transferring to the boron nitride film, and using acetone to remove the PMMA on the surface of the graphene film.