▎ 摘　　要

NOVELTY - The semiconductor light emitting device (100b) has a mask layer (130d) disposed on a first conductivity-type semiconductor base layer (120) and including a graphene layer with openings exposing the first conductivity-type semiconductor base layer. Light emitting nanostructures (140) are disposed on the openings and each including a first conductivity-type semiconductor core (142), an active layer (144), and a second conductivity-type semiconductor layer (146). USE - Semiconductor light emitting device for backlight unit (claimed) of display device. ADVANTAGE - Since the light emitting nanostructures have a three-dimensional shape, a light emitting surface area is relatively large, increasing luminous efficiency. Since the semiconductor light emitting device includes the mask layer and the high resistive layer including a heterogeneous interface, a leakage current may be effectively blocked in both the upper and lower portions of the light emitting nanostructures. DESCRIPTION OF DRAWING(S) - The drawing is a cross-sectional view schematically illustrating a semiconductor light emitting device. Semiconductor light emitting device (100b) First conductivity-type semiconductor base layer (120) Mask layer (130d) Light emitting nanostructures (140) First conductivity-type semiconductor core (142) Active layer (144) Second conductivity-type semiconductor layer (146)