▎ 摘　　要

NOVELTY - The method involves cleaning the silicon substrate. A molybdenum disulfide-graphene composite layer is formed on a silicon substrate. An atomic layer deposition process is used to grow a layer of aluminum nitride on the molybdenum disulfide-graphene composite layer. A gallium nitride layer is grown on the aluminum nitride layer using a metal organic chemical vapor deposition process. USE - Method for preparing a gallium nitride epitaxial structure based on a molybdenum disulfide-graphene composite buffer layer, performed in manufacture of electronic device and photoelectronic device. ADVANTAGE - The molybdenum disulfide/germanium disulfide composite layer is used as a buffer layer between the silicon substrate and the GaN epitaxial layer, so that problem of cracks and mismatch defects such as large lattice mismatch and thermal mismatch between the substrate and the epitaxial layer can be solved, so as possible to effectively reduce the stress between the substrate and the epitaxial material, and improve the quality of GaN epitaxial layer. DESCRIPTION OF DRAWING(S) - The drawing shows a flow diagram illustrating the process for preparing the gallium nitride epitaxial structure. (Drawing includes non-English language text)