▎ 摘　　要

NOVELTY - The chamber (1500) has a chamber case (1110) in which a substrate comprising a metal thin film is placed. A gas supplier (1120) supplies carbon gas into an inner space of the chamber case. A main heater (1140) emits light to the inner space to heat the substrate. An auxiliary heater (1145) is placed between the substrate and the main heater, and heats an auxiliary space between the substrate and the auxiliary heater for synthesizing graphene on the substrate. The auxiliary heater comprises an auxiliary heating portion, which faces a surface of the substrate. USE - Chamber for synthesizing graphene on a substrate at a high-temperature/high-vacuum environment. ADVANTAGE - The chamber uniformly increases temperature of the substrate and reduces time taken to increase the temperature as the light is simultaneously emitted from main heating units that are placed over and under the substrate, thus reducing time taken to synthesize the graphene, while reducing loss of radiant energy, and hence improving graphene synthesis efficiency. The chamber provides a gas supply unit with an extension portion to extend toward the auxiliary space or efficiently supplies the gas toward the auxiliary space without the extension portion to minimize generation or leakage of the gas flowing to spaces other than the auxiliary space. The chamber allows rotating rollers to linearly contact a metal thin film, thus minimizing friction with the metal thin film and preventing damage to the metal thin film. The chamber produces large graphene sheets at low costs in an easy manner. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a graphene synthesis chamber. Chamber case (1110) Gas supplier (1120) Main heater (1140) Auxiliary heater (1145) Graphene synthesis chamber (1500)