▎ 摘　　要

NOVELTY - Directing ultra-low voltage electron beam (108) to surface of an insulating layer (112) arranged on an insulating layer (114) involves modifying the surface of the insulating layer (112) to selectively switch an interface between a state (S1) having an electronic property (P1) and a state (S2) having an electronic property (P2), the interface between the insulating layers (112, 114) by the application of the ultra-low voltage electron beam. USE - Directing ultra-low voltage electron beam to surface of insulating layer used in electronic assembly for reconfigurable device (all claimed). ADVANTAGE - The method allows for resolutions smaller than about 10 nm and for creation of nanostructures exhibiting desired properties at low temperatures, such as superconductivity. The method provides for higher writing speeds and scalability, and is conducive to the development of more complex families of quantum devices, including arrays of THz and optical photodetectors, and graphene-based nanodevices. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are included for the following: (1) a reconfigurable device, which comprises the insulating layers (112, 114) (a), an interface between the insulating layers (112, 114) (b), and the overlayer arranged on the insulating layer (112) (c). The electronic property of the interface is modifiable in response to an ultra-low voltage electron beam being directed to the insulating layer (112); and (2) an electronic assembly, which comprises device electrode(s) (a), interface electrode(s) (502) configured to be coupled with the device electrode(s) (b), the insulating layers (112, 114) (c), an interface between the insulating layers (112, 114), and coupled with the interface electrode(s) (d), and an overlayer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view of the electron beam and lanthanum aluminate/strontium titanate heterostructure of the reconfigurable device. Electron beam (108) Insulating layers (112,114) Interface contacts (122) Interface electrodes (502)