• 专利标题:   Diamond cutting fluid for cutting silicon carbide wafers, comprises polyethylene glycol, surfactant,defoaming agent, lubricant, graphene, deionized water, cutting fluid is weakly acidic.
  • 专利号:   CN115505452-A
  • 发明人:   XIANG D
  • 专利权人:   DEYANG ZHANYUAN NEW MATERIAL TECHNOLOGY
  • 国际专利分类:   C10M173/02, C10N030/06, C10N030/18
  • 专利详细信息:   CN115505452-A 23 Dec 2022 C10M-173/02 202312 Chinese
  • 申请详细信息:   CN115505452-A CN11221302 08 Oct 2022
  • 优先权号:   CN11221302

▎ 摘  要

NOVELTY - Diamond cutting fluid for cutting silicon carbide wafers, comprises 30-50 pts.wt.polyethylene glycol 5-15 pts.wt.surfactant 1-5pts.wt.defoaming agent 10-20 pts.wt.ubricant 0.5-3 pts.wt. graphene 50-100 pts.wt. deionized water. The cutting fluid is weakly acidic. USE - Diamond cutting fluid for cutting silicon carbide wafers. ADVANTAGE - The prepared diamond cutting fluid contains graphene powder, and graphene powder is uniformly distributed in cutting fluid by utilizing excellent mechanical property of graphene powder and compounded with silicon carbide powder, so that sliding dislocation of cutting lines during cutting can be better prevented, formula of graphene cutting fluid is weakly acidic, and during cutting, graphene can be purified by utilizing generated hydrogen, so that on one hand, production hidden danger is reduced, and on other hand, mechanical property of graphene is enhanced and utilized. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method for preparing a diamond cutting fluid for SiC wafer dicing, involves (1) mixing polyethylene glycol, lubricant and deionized water in water bath heating, and stirring to obtain mixture, (2) adding surfactant, and fully stirring until surfactant is completely dissolved to obtain liquid (b);(3) adding defoaming agent, and stirring in water bath heating to obtain liquid (c); and (4)finally adding graphene, and reacting in high-pressure reaction kettle to obtain cutting fluid.