▎ 摘　　要

NOVELTY - The structure has a graphene diode whose substrate is provided with a shallow trench insulating isolation groove, a N well, a P well and a gate and a shallow doped drain. A pair of grid side walls is fixed around a grid. The N well is formed with a source region of a pixel structure. The P well is fixed with a drain region of the pixel structure, the shallow trench isolation, the isolation groove STI, the N well and the P well. The source region and the drain region are connected by metal connection to form a circuit. A circuit surface is covered with a passivation layer. USE - The pixel structure for infrared image graphene photodiode P1. ADVANTAGE - The photosensitive material of the material graphene generates photoelectric response, and can respond to very wide wavelength. The thickness of the silicon substrate is optimized to enhance the light absorption of the graphite substrate so as to increase the optical current. The graphene directly connected with the silicon material, without need to be bonded by complementary metal oxide semiconductor (CMOS) read circuit type other infrared material. The power function of the graphene material can be adjusted by voltage (other material cannot be realized), so it can select the wavelength of the response. The response wavelength of silicon CMOS image sensor is expanded to further far from the near infrared, and the response wavelength is electrically adjustable. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a manufacturing type pixel structure for infrared image. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the silicon substrate of graphene emitting diode (Drawing includes non-English language text).