▎ 摘　　要

NOVELTY - Method (M1) of manufacturing graphene film, involves forming a catalyst metal layer containing carbon on a substrate, and growing a graphene film on the formed metal layer using carbon containing gas. USE - The method (M1) is useful for manufacturing graphene film, which is used in manufacturing semiconductor device (claimed). ADVANTAGE - The film has excellent chemical stability, specific physical property and electrical property, and can be manufactured rapidly, simply and cost-effectively. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for method (M2) of manufacturing semiconductor device, which involves forming the source electrode connected to the above-mentioned graphene film, and forming gate electrode through a gate insulating film on the graphene film.