• 专利标题:   Manufacture of nitrogen-doped graphene-and nickel sulfide quantum dot nano-composite for preparing e.g. solar battery, involves mixing nickel source, L-cysteine, ammonia and graphene oxide, washing and hydrothermally treating.
  • 专利号:   CN105296970-A, CN105296970-B
  • 发明人:   CHEN H, HAN L, JI H, JIN J, YANG X, BI E
  • 专利权人:   UNIV SHANGHAI JIAOTONG
  • 国际专利分类:   B82Y030/00, C23C018/32, H01G011/30, H01M004/36
  • 专利详细信息:   CN105296970-A 03 Feb 2016 C23C-018/32 201636 Pages: 8 English
  • 申请详细信息:   CN105296970-A CN10621308 25 Sep 2015
  • 优先权号:   CN10621308

▎ 摘  要

NOVELTY - Manufacture of nitrogen-doped graphene-and nickel sulfide quantum dot nano-composite involves mixing nickel source, L-cysteine as sulfur source, aqueous ammonia as nitrogen source and graphene oxide solution, washing and hydrothermally treating. USE - Manufacture of nitrogen-doped graphene-and nickel sulfide quantum dot nano-composite used for preparing electrode for supercapacitor, solar battery and lithium battery energy storage material and catalytic material (all claimed). ADVANTAGE - The method enables manufacture of nitrogen-doped graphene-and nickel sulfide quantum dot nano-composite having high electroconductivity, catalytic activity and stability.