▎ 摘　　要

NOVELTY - The method involves providing a field effect transducer (FET) base structure, comprising a substrate, a drain, and a source; providing a channel layer on the FET base structure; and providing a first layer on the FET base structure. The first layer comprises a one-dimensional or two-dimensional material and is arranged on an upper surface of the channel layer to form a sensing surface of the FET. The channel layer is formed and subsequently transferred onto the FET base structure. The first layer is formed on the FET base structure. USE - Method for manufacturing a field effect transducer (FET) for sensing assemblies. ADVANTAGE - The method enables to develop improved field effect transducer having high sensitivity, improved sensing capabilities, and can be miniaturised and manufactured on larger scales.