▎ 摘　　要

NOVELTY - The semiconductor device (100) comprises a substrate (110). A gate electrode (120) is provided on the substrate, and has a shape with a height greater than a width. A gate dielectric is provided on the gate electrode. A channel layer (140) is provided on the gate dielectric and comprises a two-dimensional semiconductor material. A source electrode (150) and a drain electrode (160) are electrically connected to the channel layer. Two-dimensional semiconductor material comprises graphene, black phosphorus, a transition metal dichalcogenide and trimethylhexamethylenediamine. USE - Semiconductor device e.g. FinFET and MOSFET used for semiconductor products such as memory and driver integrated circuit (IC). ADVANTAGE - The size of the semiconductor device can be reduced by using the two-dimensional semiconductor material as the channel layer. The semiconductor devices can be obtained from one wafer, and the driving speed of the devices can increase, when the size of devices is small. Thus, research can be intensively conducted into reducing the size. The channel layer can be formed on the upper surface of the gate dielectric, so as to prevent the gate electrode from being exposed to the outside of the device. The gate electrode can be provided with the shape with the height greater than the width, so that the gate electrodes can be prevented from being electrically connected to each other by the conductive layer, thus the electrical characteristics of the transistor can be improved. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a semiconductor device. Semiconductor device (100) Substrate (110) Gate electrode (120) Channel layer (140) Source electrode (150) Drain electrode (160)