▎ 摘　　要

NOVELTY - The method involves forming a lower layer metal pattern on a transparent substrate. A graphene layer is formed on the lower layer metal pattern. The graphene layer is coated with photo-resist material. The photo-resist material is exposed by the lower layer metal pattern as an etching mask. An upper layer metal pattern is formed. A self-aligned double-metal contact structure of graphene is formed. The transparent substrate is made of silicon dioxide. The lower and upper layer metal patterns are made of palladium, titanium, nickel, platinum, chromium or gold. USE - Method for preparing metal graphene dual-sided contact structure for a graphene electronic device. ADVANTAGE - The method enables ensuring an alignment structure on underlying metal and reducing contact resistance between graphene and metal, thus increasing performance of a graphene electronic device. DETAILED DESCRIPTION - The dry etching process is performed by using etching gas i.e. carbon tetrafluoride gas. The etching gas is free from nitrogen or carrier gas e.g. hydrogen, argon or helium. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating a method for preparing a metal graphene dual-sided contact structure.