1. 平台首页
  2. 国际专利信息
  • 专利标题:   N-doped graphene used for ultracapacitor, is obtained by substituting at least one of carbon atom by nitrogen.
  • 专利号:   KR2013022565-A, KR1886871-B1
  • 发明人:   CHOI J W, KANG J K, JEONG H M
  • 专利权人:   KOREA ADV INST SCI TECHNOLOGY, KOREA ADVANCED SCI TECHNOLOGY INST
  • 国际专利分类:   C01B031/02, H01G009/058, H01G011/22
  • 专利详细信息:   KR2013022565-A 07 Mar 2013 C01B-031/02 201363 Pages: 15
  • 申请详细信息:   KR2013022565-A KR085202 25 Aug 2011
  • 优先权号:   KR085202

▎ 摘　　要

NOVELTY - N-doped graphene is obtained by substituting at least one of carbon atom by nitrogen. USE - N-doped graphene is used for ultracapacitor (claimed). ADVANTAGE - The N-doped graphene is manufactured, by simple method. The ultracapacitor comprising the N-doped graphene has durability. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for manufacture of N-doped graphene.