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  • 专利标题:   Method for n-doping of graphene for use in e.g. sensor, involves growing graphene on substrate by supplying reaction gas containing carbon source, heating and doping using n-type dopant or vapor containing n-type dopant.
  • 专利号:   WO2012118350-A2, KR2012099910-A, WO2012118350-A3, EP2682367-A2, CN103502147-A, US2014054550-A1, JP2014518827-W, KR1469450-B1, EP2682367-A4
  • 发明人:   HONG B H, KIM E S, KIM E, HONG B
  • 专利权人:   UNIV SUNGKYUNKWAN RES BUSINESS FOUND, UNIV SUNGKYUNKWAN RES BUSINESS FOUND, GRAPHENE SQUARE INC, GRAPHENE SQUARE INC, GRAPHENE SQUARE INC
  • 国际专利分类:   C01B031/02, H01L021/329, H01L021/761, C23C016/26, H01L029/861, H01L021/02, H01L021/04, H01L029/16, H01L021/205, H01L021/223, H01L021/228, H01L029/06, H01L029/868, H01L051/05, H01L051/30, C01B031/04, H01L021/22
  • 专利详细信息:   WO2012118350-A2 07 Sep 2012 C01B-031/02 201261 Pages: 20
  • 申请详细信息:   WO2012118350-A2 WOKR001589 02 Mar 2012
  • 优先权号:   KR018425

▎ 摘　　要

NOVELTY - Graphene is grown on a substrate by supplying reaction gas containing carbon source, and heated. n-Type dopant or vapor containing n-type dopant is doped on the graphene to obtain n-doped graphene. USE - Method for n-doping of graphene for use in sensor and memory. ADVANTAGE - The n-doped graphene having improved electrical characteristics is manufactured easily by a simple process without using a separate facility.