• 专利标题:   Preparing a silica/graphene nanocomposite by microwave chemical vapor deposition comprises e.g. placing silica in a reaction chamber of a microwave plasma, and introducing shielding gas and heating.
  • 专利号:   CN109957784-A, CN109957784-B
  • 发明人:   SUN T, SHI H, FENG S, WEI D, ZHAO B
  • 专利权人:   CHINESE ACAD SCI CHONGQING GREEN INTEL
  • 国际专利分类:   C23C016/26, C23C016/511, C23C016/513, C23C016/517
  • 专利详细信息:   CN109957784-A 02 Jul 2019 C23C-016/26 201962 Pages: 10 Chinese
  • 申请详细信息:   CN109957784-A CN10292335 12 Apr 2019
  • 优先权号:   CN10292335

▎ 摘  要

NOVELTY - Preparing a silica/graphene nanocomposite by microwave chemical vapor deposition comprises (1) placing silica in a reaction chamber of a microwave plasma, and a shielding gas is introduced at a flow rate of 150-250 sccm, heating at a temperature rising rate of 25-40 degrees C/minutes to maintain the temperature in the reaction chamber to 500-700 degrees C, (2) introducing mixed gas of hydrogen and a carbon source gas into a reaction chamber of a microwave plasma at a flow rate of 150-250 sccm, and in-situ growth is performed on the surface of the silica to form a graphene coating layer, and the growth is stopped after the growth is completed, cooling mixed gas to room temperature to obtain a silica/graphene nanocomposite, and the volume ratio of the hydrogen gas to the carbon source gas is 1:5 to 10. USE - The method is useful for preparing a silica/graphene nanocomposite by microwave chemical vapor deposition. ADVANTAGE - The material has high conductivity and high mechanical strength. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for silica/graphene nanocomposite prepared by microwave chemical vapor deposition which is mentioned in above mentioned method.