▎ 摘　　要

NOVELTY - The tunable terahertz absorber, comprises a metal layer (1), a doped silicon layer (2), a strontium titanate (STO) layer (3), and a graphene layer (4) from the bottom up. The doped silicon layer, the strontium titanate layer, and the graphene layer are periodically arranged on the metal layer, and the doped silicon layer. The arrangement period of the strontium titanate layer and the graphene layer is smaller than the incident wavelength. The metal layer is deposited on the dielectric layer with a flat surface by an evaporation process, and then a thin film deposition technology is used on the metal. The doped silicon layer and the strontium titanate layer are sequentially deposited on the layer, and finally the graphene pattern is manufactured by photolithography exposure technology and the graphene layer is deposited. USE - Tunable terahertz absorber. ADVANTAGE - The tunable terahertz absorber has simple structure, easy processing, and good absorption and tuning effect. It is suitable for electromagnetic anti-interference and modern communication systems. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a tunable terahertz absorber. Metal layer (1) Doped silicon layer (2) Strontium titanate layer (3) Graphene layer (4)