▎ 摘　　要

NOVELTY - Forming a graphene layer (130) on a sapphire substrate (410), involves: forming a single crystalline semiconductor-carbon alloy layer (320) on a sapphire substrate, where the single crystalline semiconductor-carbon alloy layer is epitaxially aligned to the sapphire substrate; and forming a graphene layer directly on the single crystalline semiconductor-carbon alloy layer. USE - For forming a graphene layer on a sapphire substrate (claimed). ADVANTAGE - The commercial availability of sapphire substrates and semiconductor substrates with a diameter of more than six inches allows formation of a graphene layer on a commercially scalable substrate for low cost manufacturing of devices employing a graphene layer. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a structure comprising a graphene layer located on a single crystalline sapphire substrate. DESCRIPTION OF DRAWING(S) - The figure shows a vertical cross-sectional view of a structure including underlying semiconductor substrate, silicon carbide substrate, and graphene layer deposited on them. Top surface (21) Graphene layer (130) Single crystalline semiconductor-carbon alloy layer (320) Sapphire substrate (410)