• 专利标题:   Preparation of graphene film for growth of thin film involves providing copper foil substrate having first and second surfaces, adhering protective film to first surface, oxidizing second surface to obtain first intermediate, and removing protective film to expose first surface.
  • 专利号:   CN114604860-A
  • 发明人:   LUO G, WANG G, WANG X, LI J, ZHANG B
  • 专利权人:   BEIJING GRAPHENE TECHNOLOGY RES INST CO
  • 国际专利分类:   C01B032/186
  • 专利详细信息:   CN114604860-A 10 Jun 2022 C01B-032/186 202293 Chinese
  • 申请详细信息:   CN114604860-A CN10252457 15 Mar 2022
  • 优先权号:   CN10252457

▎ 摘  要

NOVELTY - Preparation of graphene film for growth of thin film involves providing a copper foil substrate having a first surface and a second surface opposite to the first surface, performing oxidation treatment to the second surface to obtain first intermediate, after protective film is attached to the first surface, and removing the protective film to expose the first surface. USE - Preparation of graphene film for growth of thin film. ADVANTAGE - The method is simple to operate, can reduce the carbon impurity content in the substrate, significantly improve the monolayer rate of graphene, and can be carried out in large batches and in the form of roll-to-roll. The production efficiency of the copper foil substrate of the substrate can be significantly improved, and the copper foil substrate can be prepared in batches. The production efficiency of the graphene film is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of batch graphene film, which involves: (a) annealing the graphene film, where the graphene thin film is formed on the first surface of the graphene thin film growth substrate after the annealing is completed by chemical vapor deposition method.