▎ 摘　　要

NOVELTY - The device has a channel (120) formed between first and second semiconductor regions. A gate structure (130) includes a gate insulating film covering the channel and a gate electrode covering the gate insulating film, where first source/drain structure (110) includes a silicide film and a conductive barrier. The silicide film is formed between the first semiconductor region and the first electrode. The conductive barrier is formed between the silicide film and the first electrode, and includes a conductive two-dimensional material, where the first electrode includes one of tungsten, cobalt, copper, ruthenium, molybdenum, rhodium and iridium, and the silicide film includes a mixture of silicon and one of tungsten, titanium, cobalt, nickel and platinum, and the conductive two-dimensional material includes one of graphene, black phosphorus, amorphous boron nitride, two-dimensional hexagonal boron nitride (h-BN) and phosphorene. USE - Semiconductor device for use in an electronic apparatus (claimed). ADVANTAGE - The device uses a diffusion prevention barrier with a small thickness to provide high performance while reducing size of the device. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of a structure of a semiconductor device. 101Substrate 110, 140Source/drain structures 120Channel 130Gate structure 150Data storage element