• 专利标题:   Chemical doping of graphene film involves irradiating laser to graphene film immersed in melt containing metallic compound dissolved in solvent.
  • 专利号:   JP2020100514-A
  • 发明人:   AMUR A, UMENO M
  • 专利权人:   SIZU TECHNO KK
  • 国际专利分类:   C01B032/186, C01B032/194, C23C016/26, C23C016/56
  • 专利详细信息:   JP2020100514-A 02 Jul 2020 C01B-032/194 202056 Pages: 7 Japanese
  • 申请详细信息:   JP2020100514-A JP237639 19 Dec 2018
  • 优先权号:   JP237639

▎ 摘  要

NOVELTY - Chemical doping of graphene film involves irradiating laser to graphene film immersed in melt containing metallic compound dissolved in solvent. USE - Chemical doping of graphene film. ADVANTAGE - The method produces pure graphene film with reduced resistivity and high crystallinity. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of manufacturing apparatus of graphene film. Reaction container (1) Waveguide (2) Plasma excitation board (3) Slot antenna (4) Manufacturing apparatus (100)