▎ 摘　　要

NOVELTY - The detector has a n-type heavily doped silicon substrate (2) whose lower surface is covered with a bottom electrode (1). The upper surface is grown with an epitaxial silicon layer (3). The upper surface of epitaxial silicon layer is grown with medium isolation layer (4). The upper surface of medium isolation layer is deposited with a top part electrode. The top part electrode is provided with a medium isolation layer window (5) passes through the upper surface of epitaxial silicon layer, where the medium isolation layer is concave structure, and the boundary of dielectric isolation layer window is less than that of electrode. The upper surfaces of top part electrode and epitaxial silicon layer are covered with a macroscopic assembly graphene film. USE - Used as infrared avalanche photoelectric detector based on macroscopic assembly graphene/epitaxial silicon Schottky junction. ADVANTAGE - The detector: utilizes macroscopic assembly graphene infrared light absorbing layer; inhibits noise current multiplication through the separation of absorption multiplication layer; realizes sensitive detection of weak light signal, and large internal gain; detects the infrared spectrum; solves the problem that the traditional Schottky barrier detector has low response to the infrared light detection; and is excellent for transmission of communication wave band information. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method for preparing infrared avalanche photoelectric detector based on macroscopic assembly graphene/epitaxial silicon Schottky junction. DESCRIPTION OF DRAWING(S) - The drawing shows a structure schematic diagram of the infrared avalanche photoelectric detector based on macroscopic assembly graphene/epitaxial silicon Schottky junction. 1Bottom electrode 2n-type heavily doped silicon substrate 3Epitaxial silicon layer 4Medium isolation layer 5Medium isolation layer window