▎ 摘　　要

NOVELTY - Heterogeneous solar cell comprises back electrode, germanium cell layer, tunneling junction (A), gallium-arsenide cell layer, tunneling junction (B), graphene layer, quantum dot layer, anti-reflection layer and front electrode. The graphene/ indium-gallium-nitride layer is transferred by wet transfer to tunneling junction (B) and causes indium-gallium-nitride layer to be in direct contact with tunneling junction (B). USE - Heterogeneous solar cell. ADVANTAGE - The multijunction heterogeneous solar cell is prepared economically by simple process which continuously controls absorption spectrum range by adjusting value of x in InxGa1-xN, and forbidden band width of InGaN can be continuously changed from 3.4 eV (GaN) to 0.7 eV (InN). The formation of heterojunction between graphene and indium-gallium-nitride layer does not require lattice matching and can be directly transferred. The heterojunction formed by graphene and indium-gallium-nitride layer has higher open circuit voltage, enables graphene/InxGa1-xN solar cells to have higher photoelectric conversion efficiency. DETAILED DESCRIPTION - Heterogeneous solar cell comprises back electrode, germanium cell layer, tunneling junction (A) , gallium-arsenide cell layer, tunneling junction (B), graphene layer/indium-gallium-nitride layer of formula InxGa1-xN, quantum dot layer, anti-reflection layer and front electrode. The graphene/indium-gallium-nitride layer (InxGa1-xN) is transferred by wet transfer to tunneling junction (B) and causes indium-gallium-nitride layer (InxGa1-xN) to be in direct contact with tunneling junction (B). An INDEPENDENT CLAIM is included for preparation of heterogeneous solar cell.