▎ 摘　　要

NOVELTY - The method involves forming a graphene material layer with right and left lateral side portions over a top of a region right and left side material. Collector material is formed on a substrate. A dielectric is deposited in the region material. The dielectric is planarized in the region material. Native oxide is cleaned and removed on a top surface of the collector material. A base graphene material layer is transferred to the top surface of the graphene layer. The base layer is bonded. Another graphene material layer is photo stepped and defined to the top surface of the graphene layer. USE - Method for making a graphene base transistor. ADVANTAGE - The method ensures that the graphene base with lateral side portions on dielectric material with low dielectric constant in the region right and left side material layer reduces capacitance of a base graphene material layer to a collector or emitter in a region or reduce capacitance to the subcollector or to a substrate. The method ensures that high electrical conductivity of graphene allows use of a thin base graphene material layer to reduce transit time of electrons through the base region and reduce energy loss of hot electrons in transiting the thin graphene base material. The method ensures that enhanced lateral thermal conductivity of graphene spreads a thermal load to a larger area to reduce thermal resistance. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a graphene base transistor. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of a graphene base transistor with a reduced collector area.