▎ 摘　　要

NOVELTY - The switch has a substrate layer formed with lower and upper insulating layers. The substrate layer, the lower insulating layer and the upper insulating layer are formed as rectangular-shaped structure. Four electrodes are arranged in the upper insulating layer, where distance between the first electrode and the second electrode is equal to distance between the third electrode and the fourth electrode. An upper waveguide layer, an adjusting layer and a lower waveguide layer are formed in the upper insulating layer. The adjusting layer is formed at a rear end of a lower graphene layer and a chromium film layer. The chromium film layer is formed at a bottom end of the fourth electrode. The lower insulating layer and the upper insulating layer are made of Silicon dioxide material. The lower waveguide layer, the substrate layer and the upper waveguide layer are made of silicon material. A dielectric layer is made of Hafnium oxide material. USE - Graphene-silicon waveguide compact Y-branch broadband dual-mode optical switch. ADVANTAGE - The switch has high extinction ratio, and realizes different switch states, and reduces power consumption, increases response speed. DESCRIPTION OF DRAWING(S) - The drawing shows a front view of a graphene-silicon waveguide compact Y-branch broadband dual-mode optical switch.