▎ 摘　　要

NOVELTY - Metal alkoxide is dissolved in organic solvent to obtain metal alkoxide solution having molar concentration of 0.0001-1 mol/L. The metal alkoxide solution is uniformly coated on graphene surface, organic solvent is volatilized and hydrolyzed, to obtain ultra-thin metal hydroxide film which is used as a nucleating layer. The resultant product is provided into a reactor in which atomic layer deposition process is carried out, to obtain graphene high-k gate dielectric layer. USE - Integration method of graphene high-k gate dielectric layer used for semiconductor device e.g. graphene field effect transistor. ADVANTAGE - The method enables integration method of graphene high-k gate dielectric layer with high dielectric constant and quality, and excellent damage resistance.