▎ 摘　　要

NOVELTY - The device (100) has an insulating layer (112) provided on an interlayer dielectric (122). The interlayer dielectric is formed on a silicon substrate (110) to cover connecting lines (120), a source electrode (131) and a drain electrode (132). The interlayer dielectric exposes a portion of the electrodes. A graphene layer is formed on the insulating layer. An end of the graphene layer is connected to the source electrode, and another end is connected to the drain electrode. A gate electrode (133) is provided on the substrate and under the graphene layer. USE - Graphene electronic device i.e. FET, for use in a gas sensor (claimed). ADVANTAGE - The device allows an electronic circuit and the insulating layer to be fabricated at relatively high temperature and to be formed before transferring a graphene and low temperature processes performed at temperature of about 150 degree celsius or less to be performed after transferring the graphene, thus preventing or reducing damage to the graphene due to high temperature processes. DETAILED DESCRIPTION - INDEPENDENT CLAIMS are also included for the following: (1) a method for fabricating a graphene electronic device (2) a gas sensor comprising a graphene electronic device. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a graphene electronic device. Graphene electronic device (100) Silicon substrate (110) Insulating layer (112) Connecting lines (120) Interlayer dielectric (122) Source electrode (131) Drain electrode (132) Gate electrode (133)