▎ 摘　　要

NOVELTY - The method involves selecting a substrate (1). A carbon layer (2) is formed on a top of the substrate through sputter deposition or vapor deposition. The substrate and the carbon layer are subjected to an oxidation process (3) at the same time. A graphene oxide layer (4) is formed on the surface of substrate after oxidation process of carbon layer. The substrate and the graphene oxide layer are subjected to a reduction process (5) at the same time. A reduced graphene oxide layer (6) is formed after reduction process of the graphene oxide layer. USE - Method for producing large-area reduced graphene oxide sheet on substrate. ADVANTAGE - The reduced graphene oxide is produced efficiently at low-cost. The quality of reduced graphene oxide is improved and large-area reduced graphene oxide sheet is directly produced on different types of substrate including metal and non-metal substrates. The large-area reduced graphene oxide sheet production process is simplified. DETAILED DESCRIPTION - The substrate is selected from a group consisting of a metal substrate and a non-metal substrate. The metal substrate is selected from a group consisting of a single metal material and a single alloy material. The metal substrate is formed of a metal material having another metal material sputter deposited or vapor deposited onto a top of metal material, and the other metal material is selected from a group consisting of metal nickel and nickel alloy. The non-metal substrate is selected from a group consisting of ceramic substrate, glass substrate, semiconductor substrate, engineering plastic substrate, quartz substrate and sapphire substrate, which are formed of non-metal material. The non-metal substrate is formed of non-metal material having metal material sputter deposited or vapor deposited onto a top of non-metal substrate, and the metal material is selected from a group consisting of metal nickel, nickel alloy, chrome, chrome alloy, titanium and titanium alloy. The temperature for oxidation process is set to range between 200 and 1500 degrees C. The oxidation process is selected from a group consisting of an atmosphere heat treatment, an atmosphere-oxygen reaction type heat treatment and a vacuum-oxygen reaction type heat treatment. An amount of oxygen is supplied into an inert gas in atmosphere-oxygen reaction type heat treatment. An amount of oxygen is supplied into a vacuum space in the vacuum-oxygen reaction type heat treatment. A patterned reduced graphene oxide layer is formed by performing an anti-etching film attachment process, an exposure and development process, and an etching process on the reduced graphene oxide layer. A patterned carbon layer is formed by performing anti-etching film attachment process, exposure and development process, and etching process on the carbon layer. The anti-etching film is removed. The substrate and the patterned carbon layer are subjected to oxidation process at the same time. A patterned graphene oxide layer is formed after oxidation process of the patterned carbon layer. The substrate and patterned graphene oxide layer are subjected to reduction process at the same time. A patterned reduced graphene oxide layer is formed after reduction process of patterned graphene oxide layer. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic view illustrating the process for producing large-area reduced graphene oxide sheet on substrate. Substrate (1) Carbon layer (2) Oxidation process (3) Graphene oxide layer (4) Reduction process (5) Reduced graphene oxide layer (6)