▎ 摘　　要

NOVELTY - Preparing high-quality low-defect single layer graphene comprises adding dissolving alkali metal potassium in organic solvent dimethyl sulfoxide (DMSO) and/or tetrahydrofuran (THF), to obtain alkali metal-organic solvent insert, adding spherical graphite, sealing, ultrasonically treating, allowing to stand, to form first-order graphite intercalation compound (KC8) solution, adding excess of benzonitrile solution, transferring the insert in the graphite interlayer compound, adding solution in the surface of the cleaned silicon/silicon dioxide surface, spin coating and drying. USE - The method is useful for preparing high-quality low-defect single layer graphene (claimed). ADVANTAGE - The method: reduces the production cost of high-quality single-layer graphene; and improves the production efficiency so that the mass production is possible. DETAILED DESCRIPTION - Preparing high-quality low-defect single layer graphene comprises (a) adding dissolving alkali metal potassium in organic solvent dimethyl sulfoxide (DMSO) and/or tetrahydrofuran (THF), to obtain alkali metal-organic solvent insert, (b) adding spherical graphite, sealing with more than 1000 W power, ultrasonically treating for 30 minutes, allowing to stand for 2 hours, to form first-order graphite intercalation compound (KC8) solution, (c) adding an excess of benzonitrile solution to the first-order graphite intercalation compound solution and transferring the insert in the graphite interlayer compound, (d) adding the solution in a dropwise manner in the surface of the cleaned silicon/silicon dioxide surface, spin coating and drying.