▎ 摘　　要

NOVELTY - The graphene device (200) has a gate oxide layer (220) which is formed in a lower portion of a graphene FET layer (230). The charge quantity locked in a charge trap portion (221) of the gate oxide layer is controlled. The light source is made to incident in the graphene FET layer to the predetermined position. The gate oxide layer is made of insulation material selected from silicon dioxide, silicon nitride, aluminum oxide, hafnium oxide, organic material, or polymer material. A substrate is formed from silicon, gallium arsenide, or indium tin oxide material. USE - Graphene device used for solar cell, display device, non-volatile optical memory device, and logic device. ADVANTAGE - The desired doping effect of the graphene FET is achieved without the need of additional manufacturing processes. The different-sized graphene p-n junction is utilized for the photodetector. Hence, the efficiency of the solar cell is improved. The operation stability of the non-volatile optical memory device and the logic device is steadily maintained even after the p-n junction formation is ensured through the light source. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a method for manufacturing graphene device. DESCRIPTION OF DRAWING(S) - The drawing shows a sectional view of the graphene device. (Drawing includes non-English language text) Graphene device (200) Gate oxide layer (220) Charge trap portion (221) Graphene FET layer (230) Electrode layer (240)