• 专利标题:   Graphene based memory structure, has three electrodes formed on base body, where second electrode is fixed below to beam and third electrode is connected with base body, which is suspended above graphene suspension beam and second electrode.
  • 专利号:   CN106997925-A
  • 发明人:   CHI X, ZHANG J, DENG Y, SUN L
  • 专利权人:   NAT CENT NANOSCIENCE TECHNOLOGY CHINA
  • 国际专利分类:   H01L045/00
  • 专利详细信息:   CN106997925-A 01 Aug 2017 H01L-045/00 201774 Pages: 20 Chinese
  • 申请详细信息:   CN106997925-A CN10051372 26 Jan 2016
  • 优先权号:   CN10051372

▎ 摘  要

NOVELTY - The structure has three electrodes (1-3) formed on a base body (5). An end of a graphene suspension beam (4) is fixed on the first electrode. The second electrode is fixed below to the graphene suspension beam. The third electrode is connected with the base body, which is suspended above the graphene suspension beam and the second electrode, where thickness of the graphene suspension beam is greater than distance of the base body. USE - Graphene based memory structure. ADVANTAGE - The structure is simple in design, and satisfies requirement of large-scale industrial production, and improves large storage density. DETAILED DESCRIPTION - The base body is made from non-metal material and/or metal oxide material, silicon dioxide, aluminum oxide or Hafnium dioxide. An INDEPENDENT CLAIM is also included for a method for forming graphene based memory structure. DESCRIPTION OF DRAWING(S) - The drawing shows a perspective view of a graphene based memory structure. Electrodes (1-3) Graphene suspension beam (4) Base body (5) Upper plane (6)