▎ 摘　　要

NOVELTY - Preparing carbonitride/graphene oxide/crystal face bismuth vanadium oxide heterostructure, comprises stirring and adding the graphene oxide/ bismuth vanadate powder into graphitic carbon nitride solution, stirring for 30-60 minutes to obtain precursor C, where the mass ratio of graphene oxide/ bismuth vanadate powder and graphitic carbon nitride in graphitic carbon nitride solution is (2-8):(8-2), ultrasonic reacting the precursor C at room temperature, washing the precipitate and drying. USE - The heterostructure is useful for photocatalytic degradation of organic pollutants (claimed). DETAILED DESCRIPTION - Preparing carbonitride/graphene oxide/crystal face bismuth vanadium oxide heterostructure, comprises (i) dissolving bismuth nitrate pentahydrate in diluted nitric acid, stirring until the solution is clear, adding ammonium metavanadate and stirring for 50-80 minutes to form precursor A, where the molar ratio of bismuth nitrate pentahydrate and ammonium metavanadate Bi is 1:1, (ii) hydrothermal reacting the precursor A for 13-16 hours at 70-90 degrees C to prepare crystal face bismuth vanadate precipitate, washing the precipitate and drying to obtain bismuth vanadate powder, (iii) adding graphene oxide into volume fraction of 40-60% aqueous ethanol solution, ultrasonically dispersing and stirring uniformly, adding dilute nitric acid, ultrasonic dispersing and stirring uniformly, adding sodium hydroxide solution, ultrasonic dispersing and stirring uniformly to obtain graphene oxide solution, where the molar ratio of graphene oxide, nitric acid in diluted nitric acid and sodium hydroxide in sodium hydroxide solution is (0.23-0.7):1:1, (iv) placing the bismuth vanadate powder into graphene oxide solution, stirring for 40-60 minutes to form precursor B, hydrothermal reacting the precursor B at 70-90 degrees C for 13-16 hours to obtain graphene/ bismuth vanadate precipitate, washing the precipitate and drying to obtain graphene oxide/ bismuth vanadate powder, where the mass ratio of bismuth vanadate and graphene oxide in graphene oxide solution is (3-6):1, (v) heating carbamide from room temperature to 530-580 degrees C and calcining for 2-4 hours to obtain graphitic carbon nitride powder, (vi) stirring and adding graphitic carbon nitride powder into deionized water, stirring ultrasonically and mixing uniformly to obtain graphitic carbon nitride solution, (vii) stirring and adding the graphene oxide/ bismuth vanadate powder into graphitic carbon nitride solution, stirring for 30-60 minutes to obtain precursor C, where the mass ratio of graphene oxide/ bismuth vanadate powder and graphitic carbon nitride in graphitic carbon nitride solution is (2-8):(8-2), and (viii) ultrasonic reacting the precursor C at room temperature, washing the precipitate and drying. An INDEPENDENT CLAIM is also included for the carbonitride/graphene oxide/crystal face bismuth vanadium oxide heterostructure prepared by the above method, where the heterostructure is monoclinic, the bismuth vanadium oxide, graphene oxide and graphitic-carbon nitride are coexisted to form heterostructure structure and their energy levels are matched with each other.