▎ 摘　　要

NOVELTY - The method involves providing (S10) a cathode. A quantum dot light emitting layer is formed (S20) on the cathode. A first transition metal oxide layer is formed (S30) on one side of the quantum dot light-emitting layer far away from the cathode. A graphene layer is formed (S40) on one side of the first transition metal oxide layer far away from the quantum dot light emitting layer. A second transition metal oxide layer is formed (S50) on one side of the graphene layer by adopting an evaporation method far away from the first transition metal oxide layer. An anode is formed (S60) on one side of the second transition metal oxide layer far away from the graphene layer to obtain the quantum dot LED. USE - Method for preparing quantum dot LEDs. ADVANTAGE - The hole injection capability is improved, the active balance of electrons and holes is realized on the quantum dot light-emitting diode, the recombination efficiency of electron-hole pairs is improved, and the light-emitting efficiency of the device is improved. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a quantum dot LED. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating a method for manufacturing a quantum dot LED. (Drawing includes non-English language text) Step for providing a cathode (S10) Step for forming a quantum dot light emitting layer on the cathode (S20) Step for forming a first transition metal oxide layer on one side of the quantum dot light-emitting layer far away from the cathode (S30) Step for forming a graphene layer on one side of the first transition metal oxide layer far away from the quantum dot light emitting layer (S40) Step for forming a second transition metal oxide layer on one side of the graphene layer (S50) Step for forming an anode on one side of the second transition metal oxide layer far away from the graphene layer (S60)