• 专利标题:   Nitrogen-doped three-dimensional porous graphene for use in electrode material, contains predetermined amount of nitrogen content, and specific conductivity.
  • 专利号:   CN107857253-A
  • 发明人:   HE W, ZHANG Y, LI Z, AN S, WANG Y
  • 专利权人:   UNIV INNER MONGOLIA SCI TECHNOLOGY
  • 国际专利分类:   C01B032/184, H01G011/36
  • 专利详细信息:   CN107857253-A 30 Mar 2018 C01B-032/184 201833 Pages: 9 Chinese
  • 申请详细信息:   CN107857253-A CN11260869 04 Dec 2017
  • 优先权号:   CN11260869

▎ 摘  要

NOVELTY - A nitrogen-doped three-dimensional porous graphene contains total nitrogen content of 6-10. The conductivity of nitrogen-doped three-dimensional porous graphene is 232-427 S.m-1. USE - Nitrogen-doped three-dimensional porous graphene for use in electrode material. ADVANTAGE - The nitrogen-doped three-dimensional porous graphene increases the effective contact area of the material, improves electrochemical performance, improves specific capacitance and cycle performance for electrode materials, and is prepared by simple process at low equipment cost. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for preparation of nitrogen-doped three-dimensional porous graphene, which involves (S1) dispersing graphite oxide in deionized water and ultrasonically dispersing to obtain 1 mg/ml graphene oxide suspension, (S2) adding nitrogen-doping agent to suspension, uniformly stirring the mixture, (S3) increasing the temperature of the mixture, cooling the mixture to room temperature to obtain solid-liquid mixture, (S4) separating the precipitated product in the solid-liquid mixture, washing and drying to obtain final product.