▎ 摘　　要

NOVELTY - The detector has a first light-absorbing layer (1) i.e. single crystal Silicon sheet provided with a graphene layer (2). An interlayer structure is connected between a second light absorption layer (3) and the first light absorbing layer. The graphene layer is provided with a metal electrode. The graphene layer is connected with a high gain carrier transport channel that is connected with the first light-absorbing layer and the second light-absorbing layer, where material of the second light absorption layer and the graphene layer are a quantum dot material, and the first light- absorbing layer absorbs light of a layer material. USE - Graphene interlayer structure integrated photoelectric detector. ADVANTAGE - The detector can simultaneously realize different response to different wave bands of light, and improves response effect, simplifies photoelectric detector preparation process, and realizes strong practicality. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a photoelectric detector constructing method. DESCRIPTION OF DRAWING(S) - The drawing shows a block diagram of a graphene interlayer structure integrated photoelectric detector. Light-absorbing layers (1,3) Graphene layer (2)