▎ 摘　　要

NOVELTY - Semiconductor structure comprises semiconductor substrate (110); a first dielectric layer (192) over the semiconductor substrate; a via (140) extending through the first dielectric layer; a first graphene layer extending along a top surface of the via; and a metal line (150) spanning the first graphene layer, where metal line has a line width decreasing as a distance from the first graphene layer increases. USE - Semiconductor structure e.g. interconnecting structure used to electrically connect devices in different layers or in same layer in integrated circuit. ADVANTAGE - The method enables forming the interconnecting structure between the semiconductor devices in an easy manner. The method ensures that the device can be scaled down, so that an interval between adjacent devices can be increased, thus increasing a process window of the device, and hence manufacturing the device in a simple manner. DESCRIPTION OF DRAWING(S) - The drawing shows a schematic cross-sectional view of a semiconductor device. 100Semiconductor device 110Semiconductor substrate 140Vias 150Metal line 192First dielectric layer