▎ 摘　　要

NOVELTY - Apparatus comprises first graphene layer situated first rotational angle with respect to rotational axis extending perpendicularly through the first graphene layer, second graphene layer situated atop the first graphene layer at second rotational angle with respect to the rotational axis, and third graphene layer situated atop the second graphene layer at third rotational angle with respect to the rotational axis, where the third rotational angle is different than the second rotational angle. USE - The apparatus is useful for forming graphene structure (claimed). ADVANTAGE - The apparatus exhibits: superconductivity properties at high temperatures; and exhibits increased thermal conductivity, tensile strength, and/or photosensitivity at relatively high temperatures. DETAILED DESCRIPTION - An INDEPENDENT CLAIMS is also included for forming graphene structure. DESCRIPTION OF DRAWING(S) - The figure illustrates flowchart of example high-level method of forming stacked graphene structure. 404Forming graphene layer 406Rotating formation equipment second rotational amount 408Forming second graphene layer 410Rotating formation equipment second rotational amount 412Forming third graphene layer