▎ 摘　　要

NOVELTY - Preparing gallium nitride high linear high electron mobility transistor comprises (i) manufacturing a source electrode and a drain electrode on a sample sheet of an aluminum-gallium-naphthalene barrier layer, (ii) growing a first layer of dielectric layer material on the source electrode, the drain electrode and the aluminum-Gallium-graphene barrier layer manufactured in step (i), (iii) growing the sample on the first layer medium, (iv) defining the device active region by ion implantation isolation, and (v) etching the gate region of the etched sample on sample sheet after the isolation, (vi) exposing the gate pin region to the aluminum gallium oxide barrier layer by etching, (vii) forming the grid pin sample, and defining the grid excavation groove area by photo etching; (viii) e.g. etching step (ix) grid excavation zone area, manufacturing interconnection metal layer and metal thickening layer on transistor, and finishing device back process to obtain device. USE - Method for preparing gallium nitride high linear high electron mobility transistor (HEMT) used in radio frequency power device e.g. microwave millimeter wave power device of T/R component in phased array radar. ADVANTAGE - The method reduces device peak junction temperature under the condition of not increasing gate resistance and gate parasitic, improves the transconductance linearity, obtains the radio frequency power device with high performance, uses the gate local trench technology, thinning the gate barrier layer local area, by adjusting the trench width and trench depth to inhibit gate source current saturation, and adjusts the device thermal field distribution to reduce peak junction temperatures. DESCRIPTION OF DRAWING(S) - The drawing shows a flowchart illustrating the method for preparing gallium nitride high linear high electron mobility transistor (Drawing includes non-English language text).