• 专利标题:   Flexible graphene electrode for use in semiconductor device, has graphene layer that is formed by transferring graphene to flexible substrate, and pattern is formed on graphene layer by irradiating beam.
  • 专利号:   KR2023068523-A
  • 发明人:   RIM J Y
  • 专利权人:   RIM J Y
  • 国际专利分类:   H01B005/14
  • 专利详细信息:   KR2023068523-A 18 May 2023 H01B-005/14 202344 Pages: 5
  • 申请详细信息:   KR2023068523-A KR154391 11 Nov 2021
  • 优先权号:   KR154391

▎ 摘  要

NOVELTY - The electrode has a graphene layer (120) that is formed by transferring graphene to a flexible substrate (110). A pattern is formed on the graphene layer by irradiating a beam. The graphene layer is laminated in two layers, where width of the pattern is in a range of 300-30 micrometers. Ends of the patterns are connected in opposite directions to form a zigzag shape. The patterns are spaced apart from each other in a width direction, and are arranged side by side. USE - Flexible graphene electrode for use in semiconductor device. ADVANTAGE - The method enables to manufacture flexible graphene electrode in a simple and cost-effective manner with improved electrical conductivity. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view showing a flexible graphene electrode. 110Flexible substrate 120Graphene layer