• 专利标题:   Preparation of composite anode material involves preparing graphene solution and silicon solution, and alternately depositing graphene layers and conductive silicon thin films on surface of metal electrode at specific condition.
  • 专利号:   CN103928658-A, CN103928658-B
  • 发明人:   LIN J, WANG W, CHEN M, HOU Z
  • 专利权人:   FUJIAN NUOXI NEW MATERIAL TECHNOLOGY CO, FUJIAN NORCY NEW MATERIAL TECHNOLOGY CO
  • 国际专利分类:   H01M004/36, H01M004/38, H01M004/583
  • 专利详细信息:   CN103928658-A 16 Jul 2014 H01M-004/36 201467 Pages: 8 Chinese
  • 申请详细信息:   CN103928658-A CN10170875 25 Apr 2014
  • 优先权号:   CN10742604, CN10170875

▎ 摘  要

NOVELTY - Graphene solution having concentration of 0.01-6 wt.% and silicon solution having concentration of 0.05-1 wt.% are prepared. Graphene layers and conductive silicon thin films are alternately deposited on surface of metal electrode using prepared solutions by electron beam vapor deposition at substrate temperature of 100-500 degrees C and vacuum of 10-7-10-4 Pa, to obtain composite anode material. The total number of graphene layers and conductive silicon thin films is more than 2. USE - Preparation of composite anode material (claimed). ADVANTAGE - The method enables preparation of composite anode material having high capacitance and coulombic efficiency.