• 专利标题:   Process for forming PN junction in graphene layer through deoxyribonucleic acid (DNA) coating, involves forming DNA lamina molecular having base structure of array in order to absorb on second area of graphene layer.
  • 专利号:   KR1541084-B1, US2015243917-A1, US9831452-B2
  • 发明人:   KIM C, KIM Y J, JUNG Y M, JUN S C, LEE T, LEE S, BYUN Y T, WOO D H, KIM S H, SEO M A, KIM J H, YI J C
  • 专利权人:   KOREA INST SCI TECHNOLOGY
  • 国际专利分类:   H01L021/337, H01L051/00, H01L051/05, H01L051/10, C01B031/04
  • 专利详细信息:   KR1541084-B1 03 Aug 2015 H01L-021/337 201558 Pages: 13
  • 申请详细信息:   KR1541084-B1 KR021412 24 Feb 2014
  • 优先权号:   KR021412

▎ 摘  要

NOVELTY - The process involves forming of graphene layer (24) includes at least one first area (241) and one second area (242). The DNA lamina molecular (29) having the base structure of the array formed to be absorbed on the second area of the graphene layer. The graphene layer has the first area in which the DNA lamina molecular is not formed. The rate of the guanine base and the DNA intramolecular cytosine base are diversified. USE - Process for forming PN junction in graphene layer through deoxyribonucleic acid (DNA) coating. ADVANTAGE - The time and the process cost for the doping process can be reduced. The degree of difficulty of the process is decreased. The element fabrication yield can be increased. The graphene doping characteristic can be finely controlled through the DNA base constellation design. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is included for a PN coupling structure. DESCRIPTION OF DRAWING(S) - The drawing shows a cross-sectional view of the PN coupling structure. Graphene layer (24) Source electrode (25) DNA lamina molecular (29) First area (241) Second area (242)