▎ 摘　　要

NOVELTY - Method of etching atomic layer of graphene involves adsorbing reactive radical to a surface of graphene, and irradiating energy source to graphene to which the reactive radical is adsorbed. USE - Method of etching atomic layer of graphene used for semiconductor device. ADVANTAGE - The method efficiently and economically provides etched graphene with suppressed generation of damage to reaction chamber, without affecting the environment. The etch depth of graphene is controlled selectively by simple method while graphene etching is controlled to atomic unit.