▎ 摘　　要

NOVELTY - Method (I) of forming at least one graphene layer on a quartz substrate, comprises: (a) providing a quartz substrate (140); (b) melting a portion of the quartz substrate; (c) diffusing a form of carbon into the melted portion to form a carbon and quartz mixture; and (d) precipitating single or few layer graphene out of the carbon and quartz mixture. USE - The methods are useful for forming at least one graphene layer on a quartz substrate. ADVANTAGE - The method: allows for growing graphene directly on the quartz substrate, with much higher temperature in a confined area, while maintaining the rest of the substrate at the room temperature; and is simple, rapid, single-step, and controllable. DETAILED DESCRIPTION - An INDEPENDENT CLAIM is also included for a method (II) of forming at least one graphene layer, comprising the step (a) as per se, (b1) forming a photoresist layer (142) portion on an upper surface of the quartz substrate, where the photoresist layer portion includes the form of carbon, (c1) decomposing the photoresist layer portion to release the form of carbon, and (d1) coalescing the form of carbon into at least one graphene layer on the quartz substrate. DESCRIPTION OF DRAWING(S) - The figure shows a quartz wafer positioned on the upper layer of the photoresist layer above the portion of the quartz substrate. Quartz substrate (140) Photoresist layer (142) Quartz wafer (146)